All conventional electronics are based on the charge degree of freedom of the electron—both the numbers of charges and their energies. The Spins IN Semiconductors Program exploited the spin degree of freedom of the electron to create revolutionary electronic devices that have the potential to be very fast at very low power. This program comprised several components. The first component utilized the spin degree of freedom to enhance existing devices. For example, spin transistors, spin light emitting diodes (LEDs), and spin lasers were expected to have better performance then their non-spin counterparts. The second part of this program exploited a recently discovered coherent spin state to produce opto-electronic devices such as switches, modulators, encoders, and decoders that will operate at very high speeds (again, at very low power). The final program component involved developing prototype quantum information processing arrays that utilize the two-level spin system for the “bits” of information (“qubits”). These quantum computers and quantum networks using qubits can perform a variety of functions far more efficiently than conventional systems based on Boolean operations (ones and zeros).